Silicon Carbide MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor) is based on the material characteristics of silicon carbide, with lower switching loss and higher operating frequency, which is very suitable for the application needs of power electronics.

Silicon Carbide MOSFET's wide band gap characteristics make Silicon Carbide MOSFET can work in high temperature extreme environment, and its high thermal conductivity characteristics can reduce the volume and number of heat dissipation devices required for power devices. High critical breakdown field strength makes Silicon Carbide MOSFET have smaller RDSON under the condition of maintaining a high blocking voltage . The high saturation speed gives it higher switching frequency and better reverse recovery characteristics.